Abstract
Amorphous Ga x As 1− x thin films were prepared by a deposition process based on the sputtering of a gallium target and arsine decomposition in an RF glow discharge. DC electrical and optical properties of films, particularly around the stoichiometry, were recorded and related to the experimental conditions such as outgassing, plasma hydrogenation and deposition temperature. The properties of our material seem to be improved by a slight excess of arsenic in the films.
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