Abstract
A p·ZnSnAs2/n·ZnSe heterodiode was prepared by LPE from Sn solution on a low-resistivity n·ZnSe substrate. The I-V characteristics of the diode were measured, and it was found to have a good rectification ratio of 104 at 1 V. The diode showed a photoresponse extending over a wide wavelength region between 0.4 and 1.9 µm. The measurements of the C-V characteristics showed that the diode had an abrupt junction with a diffusion potential of 0.60 V. The dielectric constant for ZnSnAs2 was first estimated from the analysis of the C-V characteristics: εA=12.0ε0. The values of the minority carrier lifetime were obtained from the decay curves of EBIC as 70 ns and 0.4 ns for n·ZnSe and p·ZnSnAs2, respectively.
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