Abstract
A survey has been made of the electrical conductivity and optical transmission properties of a number of stannic oxide crystals cut from Bolivian cassiterite. A fundamental optical energy gap, E G ⩾ 3.54 eV with a thermal shift of −6 × 10 −4 V °K has been determined from the short wavelength cutoff. A sharp absorption at 3.07 μ has been attributed to the presence of O-H groups oriented in a plane perpendicular to the c-axis of the crystal. A simple single-level, wide bandgap analysis was applied to the conductivity and Hall data in the temperature range 100° to 500°K yielding a major donor activation energy of approximately 0.7 eV for samples containing 10 14–10 15 carriers/cm 3 at room temperature. Hall mobilities vary from 10 to 300 cm 2 V sec with effective masses and donor densities estimated near 0.8 m and 10 20 cm −3, respectively. Note is made of comparable parameter values observed by other investigators in film and powder specimens. No p-type conduction has been observed. It is concluded that stannic oxide is a broad-band semiconductor unlike the structurally similar material, rutile, which exhibits narrow 3 d-band conduction.
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