Abstract
The electron density of ZnSnN2 prepared in many experiments is as high as 1019 cm−3 and it is challenging to prepare ZnSnN2 with electron density of 1016 cm−3. Here it is shown that nanocrystalline ZnSnN2 with electron density of 1016 cm−3 can be deposited with sputtering an alloy target at relatively lower sputtering power and substrate temperature. The structural, electrical and optical properties of nanocrystalline ZnSnN2 are studied. The effect of annealing on the properties of nanocrystalline ZnSnN2 with electron density of 1016 cm−3 is also investigated. The results show that the electron density of ZnSnN2 remains to be 1016 cm−3 after being annealed at 300 °C.
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