Abstract
PbSe chalcogenide films are widely used as photosensitive elements in gas analysis devices. High absorption in the IR spectrum region and low electrical resistance are important characteristics. Continuous laser radiation exposure of films in the near UV range makes it possible to achieve the desired characteristics, replacing oven heat treatment in the technological process. In the considered laser technology, PbSe films are subjected to photothermal action by a spot of focused radiation in the progressive scanning mode. In this work, changes in the optical and electrical film properties were studied, and the mechanism of structural laser modification was also considered.
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