Abstract
The production of suitable InAs-In 2Te 3 alloys by annealing and by directional freezing methods is considered and the relevance of the second method to the phase diagram of the system is discussed. The results of measurements of Hall effect, conductivity, thermoelectric power and infra-red absorption are given for the whole composition range, and values of carrier density n, mobility μ, and optical energy gap E g are obtained. It is seen that the behaviour is similar to that of InSb-In 2Te 3 alloys in that the InAs rich alloys are highly degenerate having n ≈ 5 × 10 19/cm 3 and explanations of this behaviour in terms of solubility of tellurium in InAs or of the band structure of InAs are discussed. The variation of μ with composition and hence possible scattering mechanisms and types of conduction occurring in the alloys are considered. Assuming certain scattering effects, attempts are made to use the values of thermoelectric power in conjunction with the measured values of E g to determine the variation of intrinsic energy gap throughout the composition range.
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