Abstract
High purity germanium monosulfide was prepared and its semiconducting properties were measured. Samples are obtained by the reaction of germanium and sulfur in vacuum at high temperature and reducing in ammonium gas to remove germanium disulfide. Dark resistivities of evaporated layers and polycrystalline blocks of GeS prepared by the above method are 10 10 Ω cm or more. 1. The thermal activation energy for dark current is 0.74·1.0 ev and about 0.25∼0.5 ev at higher and lower temperature regions, respectively. 2. The absorption edge is found at about 700 mµ from the optical measurements. 3. At room temperature the maximum spectral sensitivity of photo-conductivity is observed at the wavelength of about 700 mµ in vacuum and of about 800 mµ in room air. 4. The sign of the observed thermoelectric power is that of p type at high temperature, and its magnitude is about 1 mv/deg.
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