Abstract

Impurity doped zinc oxide films show a maximum of conductivity at a proper dopant concentration, namely excess of impurity doping causes deterioration in the electrical property. With a view to improve the electrical property of impurity doped zinc oxide films, it is required to understand the relationship between various properties of the films and the true concentration of doped impurities. In this work, Ge-doped zinc oxide thin films with Ge content of 0� 8.1 at% were deposited by an RF magnetron sputtering method. Electrical, optical, and structural properties of the films were investigated. The concentration of Ge in the films was estimated by X-ray photoelectron spectroscopy (XPS) and the relationship between those properties and the Ge content was discussed. In order to deepen understanding on the conduction mechanism in the films, the temperature dependence of the electrical properties was studied as well.

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