Abstract
Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.
Highlights
Zinc oxide (ZnO) thin film is a II - VI group compound semiconductor [1,2,3] which is technologically important due to their range of electrical and optical properties [4] and these make them suitable for a variety of applications like in gas sensor and in optical waveguide along with the solar cells, thermoelectric gas sensitive devices and transparent electrodes in optoelectronic device [1,2,3,4,5]
Compared with indium tin oxide (ITO) and tin oxide (TO), aluminum doped zinc oxide thin films have a higher optical transmittance and lower resistivity. These films are more resistant against hydrogen and hydrogen plasma treatments, and they do not degrade active solar cell materials by inter-diffusion of constituents as it occurs with ITO or TO [6]
Aluminumdoped ZnO films are an important alternative to tin doped indium oxide layers, which are widely used as transparent conductive oxide (TCO) layers in solar cells due to their superior electrical and optical properties
Summary
Zinc oxide (ZnO) thin film is a II - VI group compound semiconductor [1,2,3] which is technologically important due to their range of electrical and optical properties [4] and these make them suitable for a variety of applications like in gas sensor and in optical waveguide along with the solar cells, thermoelectric gas sensitive devices and transparent electrodes in optoelectronic device [1,2,3,4,5]. Detailed study on electrical properties such as effects of sample age, solution age and Al-concentration on sheet resistance as well as optical properties of both undoped and aluminum doped zinc oxide (ZnO : Al) thin films deposited onto glass substrate by dip coating technique, using 0.1 M solution of zinc acetate and methanol as precursors, has not been reported.
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