Abstract
Polycrystalline Cd 2SnO 4 thin films were prepared by d.c. reactive sputtering from CdSn alloy targets. X-ray spectroscopy revealed that the tin cations occupy the octahedral sites in a spinel structure. Mössbauer measurements confirmed this result. Measurements of the electron concentration, the mobility and the thermoelectric power as functions of the temperature revealed that the films were degenerate semiconductors. The electrical properties of the films after post-deposition heat treatment in oxygen indicated the origin of the free carriers and the nature of the scattering process. The fundamental absorption edge showed a Burstein shift. The electron effective mass was calculated from the IR plasma reflection.
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