Abstract
Abstract Single crystals of the layered compounds TlInS 2 , TlGaS 2 and TlGaSe 2 were grown by direct synthesis of their constituents. Their electrical conductivity was studied as a function of the temperature, perpendicularly and parallel to the layer planes and it proved to be highly anisotropic. Furthermore, a differential evaluation of measured lno vs. 10 3 /T curves reveals the existence of an acceptor level at 0.237 eV, 0.370 eV and 0.207 eV above the valence band maximum of each compound, respectively. Optical absorption measurements were performed in the temperature range 15 to 300 K and the corresponding absorption coefficients were studied as a function of the temperature.
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