Abstract
The effects of annealing in vacuum on the electrical and optical properties of GaAs thin films deposited by the flash evaporation method were studied. Thin films of compound GaAs deposited upon glass substrates at room temperature were annealed in a vacuum of 2×10−6 torr at different temperatures up to 350° C. The properties of the films depended strongly on annealing temperature. The lowest resistivity measured was about 1.6 × 104 Ωcm at an annealing temperature of about 240° C. The activation energy of as-deposited and annealed films were measured and compared. Optical absorption measurements of the asdeposited samples and the samples annealed at a temperature of 240° C were made as a function of photon energy.
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