Abstract
Aluminum-doped ZnO–SnO 2 (ZTO) films were deposited by RF magnetron sputtering using a Zn 2SnO 4 target at 400 °C under Ar gas pressure of 2.0 Pa. The Al doping was carried out by placing Al sheets on the Zn 2SnO 4 target and the inclusion of Al was observed to increase to 5.3 at.%. The transmittance of Al-doped ZTO films decreased in the short wavelength region with increasing Al concentration. Al doping had no observable effect on the refractive index, but the electrical properties were remarkably affected. The conductivity exponentially decreased from 3.2 × 10 to 2.3 × 10 − 4 S cm − 1 as the Al concentration increased from 0.0 to 5.3 at.%. The Hall mobility and free carrier density also decreased with increasing Al concentration.
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