Abstract
Through a facile sublimation method, high-quality GaN nanowires with a length of several hundred micrometers were densely grown on amorphous substrates. The morphology and single-crystalline hexagonal structure of the GaN nanowires were characterized. Photoluminescence of the nanowires was studied, and a near-band-gap emission of wurtzite GaN was observed, indicating good optical quality of the GaN nanowires. Individual GaN nanowire devices were fabricated, and their photoconductivity and electrical transport properties were investigated. The results reveal that the sublimation-grown GaN nanowires possess outstanding UV sensitivity and an n-type gating effect.
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