Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films

Abstract

The effect of Cr doping on electrical and optical properties of CrxV1−xO2 thin films across the metal-insulator transition has been studied. Resistance, Hall effect, and infrared reflectance show that Cr doping systematically increases the transition temperature Tc from 59 °C at x = 0 to 70 °C at x = 0.11 with similar transition width and hysteresis from DC to infrared, but the effect appears to saturate. The conductance contrast between insulating and metallic phases decreases with Cr doping. The effects of carrier density and mobility changes across Tc will be discussed.