Abstract
Iron-doped semi-insulating Ga x In 1- x As y P 1- y (0.4⩽ y⩽1) alloys lattice-matched to InP grown by gas source molecular beam epitaxy are characterized by secondary ion mass spectrometry, current-voltage and optical loss measurements. Fe concentrations ranging from 1 × 10 15 to 1 × 10 17 cm -3 are investigated. Very high resistivities of 2 × 10 3 and 3.5 × 10 7 Ω cm are obtained for y = 1 and 0.4 with iron concentrations of 5 × 10 16 and 1 × 10 17 cm -3, respectively. For GaInAsP (y = 0.4), optical losses about 1.8 dB/cm are measured for a maximum Fe concentration of 4 × 10 16 cm -3.
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