Abstract
From a combined study of the electrical properties between room temperature and 77 K and optical absorption at 300 K of bulk CuInSe 2 samples doped with different oxygen concentrations, two shallow acceptor levels are found. The activation energy E A1 and E A2 of these levels in the dilute limit tends to be around 30 and 36 meV, respectively. The increase of E A1 and decrease of E A2 with the increase of oxygen content can be explained consistently on the basis that the ratio of Cu to In atoms increases with the increase of oxygen incorporated into CuInSe 2 lattice.
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