Abstract
Thin films of semiconducting oxides such as In2O3, SnO2, and multilayers of these two compounds have been deposited by reactive pulsed laser ablation, with the aim to produce toxic gas sensors. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser (λ=532nm) on silicon (100) substrates. A comparison, among indium oxide, tin oxide, and multilayers of indium and tin oxides, has been performed. The influence of physical parameters such as substrate temperature, laser fluence and oxygen pressure in the deposition chamber has been investigated. The deposited films have been characterized by X-ray diffraction (XRD), optical and electric resistance measurements.
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