Abstract
AbstractWe report on a study of the electrical and optical properties of strained M‐plane GaN films grown on LiAlO2 substrates. We have electrically characterized Schottky barrier devices fabricated on strained M‐plane GaN films. The current leakage found in these devices is probably related to a surface effect. The influence of the current direction for in‐plane transport in M‐plane GaN was also studied. Polarized photoluminescence spectroscopy shows the effect of residual biaxial strain on the optical selection rules, allowing to identify intrinsic transitions involving holes from the two uppermost valence bands. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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