Abstract
We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.
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