Abstract
Semi-insulating InP samples have been implanted with Zn in order to obtain p-type films. The implanted samples have been annealed by low-power pulsed-laser annealing in a N2 controlled atmosphere and in a vacuum. The Hall resistance measurements show that remarkable conductivity is obtained only in the case where the annealing is performed in a N2 atmosphere. The measured carrier activation energy evidences that the conduction is indeed due to the ionization of the implanted Zn atoms. Moreover, the mobility temperature behaviour has been used to evidence the carrier scattering mechanisms in the implanted and annealed layer. Lastly, the optical absorption coefficient of these samples has been measured by means of the photo-thermal deflection absorption technique in order to evidence the modification on the optical properties induced by the ion beam and laser irradiation.
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