Abstract
Three kinds of solid-state incandescent light emitting devices were fabricated from MOS capacitors with gate dielectrics compared of WOx, ZrHfO, and tri-layer WOx embedded ZrHfO, separately. Their electrical and optical characteristics were investigated. The ZrHfO SSI-LED has uniform light emission pattern due to the superb dielectric properties. The WOx SSI-LED showed the highest intensity of emitted light but a large leakage current. The tri-layer WOx embedded ZrHfO SSI-LED has the higher emitted light intensity than the ZrHfO SSI-LED has and a lower leakage current than the WOx SSI-LED has. Therefore, the tri-layer WOx embedded ZrHfO SSI-LED is the preferred device judged from the light emission efficiency and reliability.
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