Abstract
Atomically thin molybdenum disulfide (MoS₂) films were synthesized on a SiO₂/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS₂ films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS₂ film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS₂ film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS₂ film exhibits an electron mobility of 1.3×10-4 cm²/V·s and an on/off ratio of 6.5×10² at room temperature.
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