Abstract
The electrical uniformity of ordered In xGa 1−xP epitaxial layers prepared by a low-pressure MOCVD technique was studied. Resistivity measurements using a four-point-probe method showed that samples with a low misfit value (0 up to−1.5(10 −3) were electrically uniform. For samples with higher misfit the anisotropy of resistivity markedly increased up to a maximum of 460. Disordered samples prepared at a growth temperature outside of the ‘ordering’ interval of growth temperatures were found be electrically uniform with respect to lattice mismatch. Comparing the results obtained from X-ray diffraction, low temperature photoluminescence, and atomic force microscopy experiments, we have shown that lattice mismatch can support the evolution and extension of the ordering effect in the In xGa 1−xP layers.
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