Abstract
Vapor-phase heterojunctions between Pb0.8Sn0.2Te and PbTe epitaxial layers have been examined for tin diffusion and the electrical effects of dislocations. Tin has been shown to diffuse across the junction as an approximately symmetrical error function and growth dislocations were shown to be electrically inactive. Scanning laser microscopy and I–V characteristics show that slip dislocations caused by surface damage were responsible for deterioration in the electrical characteristics of infrared mesa diodes fabricated from the grown layers. Laser microscopy used on chemically prepared taper sections gave carrier diffusion lengths of 15 μm and p-n junction depths accurate to ∠0.1 μm.
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