Electrical and magnetic properties ofLa0.35Sr0.65Ti1−xFexO3 thin films

Abstract

We report that the La0.35Sr0.65Ti1−xFexO3 system forms a solid solution within the composition range0≤x≤0.5 and a room temperature magnetic semiconductor phase exists atx = 0.20. This system shows an anomalous Hall effect and is ferromagnetic with a large moment perFe ion. The results show that the strong La doping provides sufficient carriers to the systemto maintain carrier-mediated ferromagnetism for low Fe doping. Furthermore, thepresence of ferromagnetism within this phase space raises the possibility thatthe conduction, and hence the magnetism, could be electronically controlled.