Abstract
Hexagonal nickel sulfide shows a metal-to-semiconductor first-order phase transition at a temperature TN which depends on sulfur content. Electrical and magnetic susceptibility measurements have been made on five single crystals of compositions ranging from NiS to NiS1.02 in the temperature region 78°–300°K. For T<Tn the Ni 3d states are essentially localized or form a very narrow band. The predominant mechanism of conduction below TN is by holes in a wide band. The discontinuity in conductivity at TN is most likely due to a discontinuity in carrier mobility.
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