Abstract
We report on the electrical and magnetic properties of Mn-doped ZnO, Zn 1 m x Mn x O, ceramics prepared by a solid-state reaction method. X-ray diffraction analysis shows that the Mn ion can be dissolved into ZnO up to ∼20 mol% without changing the wurtzite structure. We find from Hall measurements for Zn 1 m x Mn x O with an additional doping of 1 mol% Ga that the Mn doping in ZnO decreases electrical conductivity along with carrier concentration. For our ceramics, electrical resistivity decreases with increase of temperature, showing semiconducting behavior. We examine the temperature dependence of the magnetization for both field cooling and zero-field cooling.
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