Abstract
Cd1−xZnxTe single crystals doped with IV group elements (Ge, Pb) were grown by the Bridgman method. The equilibrium characteristics of specimens were determined by deep levels: Ev+(0.62±0.04)eV (Ge impurity) and Ev+(0.36±0.04)eV (Pb impurity). Measurements of magnetic susceptibility (χ) have shown the increase of paramagnetic constituent χp compared with undoped CdTe and the absence of its temperature dependence. The results obtained are explained by the formation of complex associates containing intrinsic defects and impurity atoms.
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