Abstract
The electrical and interfacial properties of the Au/n-InP and Au/NiPc Schottky contact on n-type InP have been analyzed by I–V, C–V, C–f and G–f measurements. The NiPc-based device shows an excellent rectifying behaviour. The Schottky barrier heights of the Au/n-InP and Au/NiPc Schottky contacts are obtained as 0.59 eV (I–V)/0.71 eV (C–V) and 0.82 eV (I–V)/1.14 eV (C–V) with ideality factors of 1.22 and 1.83, respectively. Investigation results reveal that the NiPc organic interlayer increases the effective barrier height by influencing the space charge region of the n-type InP. Further, the difference between barrier heights obtained from I–V and C–V measurements is discussed. From the forward bias C–f and G–f characteristics, the interface state density and their relaxation times are estimated. Furthermore, it is observed that both the interface state density and the relaxation time of interface states decrease with bias voltage for the Au/n-InP and Au/NiPc Schottky contacts.
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