Abstract
In this paper, the electrical and gas-sensing properties of calcined tungsten trioxide semiconductor materials were investigated. X-ray diffraction, scan electron microscopy and infrared were used to characterize structure and performance of WO 3 semiconductor material. The average grain size of WO 3 was 22 nm after calcination at less than 800°C and 24–26 nm at more than 900°C for 1 h. The sensors of indirect heating type were fabricated. The effects of calcining temperature and operating temperature on electrical resistance and sensitivity, and sensitivity-gas concentration properties of the WO 3-based sensors were investigated. The sensor based on WO 3 exhibited high sensitivity and good response characteristics to ethanol gas. The electrical properties of WO 3 were analyzed and the sensitive mechanism was discussed.
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