Abstract
The electrical characteristics and chemical reactant sensitivity of layers of heterogeneous nanocomposites based on porous silicon and nonstoichiometric tin oxide por-Si/SnO x , fabricated by the magnetron sputtering of tin with subsequent oxidation, are studied. It is shown that, in the nanocomposite layers, a system of distributed heterojunctions (Si/SnO x nanocrystals) forms, which determine the electrical characteristics of such structures. The sensitivity of test sensor structures based on por-Si/SnO x nanocomposites to NO2 is determined. A mechanism for the effect of the adsorption of NO2 molecules on the current-voltage characteristics of the por-Si(p)/SnO x (n) heterojunctions is suggested.
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