Abstract
In this paper, titanium dioxide thin film transistor (TFT) is reported to detect 2-butanone at room temperature. The titanium dioxide (TiO2) is prepared by sol–gel method and deposited on p-Si (100) substrate by dip coating method. The gold (Au) deposited over sensing layer to form source and drain whereas titanium (Ti) metal is deposited at the bottom of p-Si substrate to act as back gate. Titanium tetrachloride (TiCl4) is used as precursor for the preparation of TiO2. The FESEM and AFM characterization of thin film is carried out to investigate the morphology and surface roughness. The average roughness, root mean square roughness of surface is found to be 30.18 nm and 38.5 nm, respectively. The transient response analysis for 5 ppm concentration of butanone reveals that the maximum response magnitude is 60%. The response/recovery time are found to be 61 s and 160 s respectively.
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