Abstract
Hall effect, conductivity, and mobility of charge carriers in n-ZnSe crystals doped with Cu or Ag metals in the process of annealing in Zn + Cu or Zn + Ag melts at 950 °C during 100 h are studied. The investigations are made in the temperature range from 55 to 500 K. The presence of Cu in the crystals leads both to inversion of the Hall coefficient sign at temperatures above 300 K and to an anomalous temperature dependence of the electron mobility. A different character of kinetic coefficient dependences is observed in n-ZnSe crystals doped with Ag. The curves have the typical form for crystals with two donor levels with different energetic depth. Silver manifests itself as a usual compensating acceptor impurity. A model explaining the existence of kinetic coefficient anomalies in n-ZnSe : Zn : Cu crystals and their lack in n-ZnSe : Zn : Ag crystals is proposed. In accordance with this model and the obtained experimental data, copper exists in n-ZnSe in two charge states: CuZn+ (d10) and CuZn++ (d9). It creates two acceptor levels near the valence band. Silver exists in n-ZnSe crystals in a singly-charged state AgZn+ with d10 electron configuration and creates a single-energy level near the valence band.
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