Abstract
Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current(EBIC) technique. Frank partials free from metallic impurities exhibit EBIC contrast at low temperatures but not at room temperature, indicating that they are only accompanied with shallow energy levels in the band gap. The energy level related to a Frank partial is determined to be about Ec - 0.08 eV in n-type Si. Frank partials decorated by Fe impurities become EBIC active at room temperature.
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