Abstract
There is a renewed interest in the electrical activity at grain boundaries in relation to the outstanding performance of thin film solar cells based on $\mathrm{Cu}(\mathrm{In},\mathrm{Ga}){\mathrm{Se}}_{2}$. We observed electrical activity at grain boundaries in $\mathrm{Cu}\mathrm{Ga}{\mathrm{Se}}_{2}$ thin films by locally resolved work function measurements, using Kelvin probe force microscopy in ultrahigh vacuum on in situ prepared surfaces. By means of their electrical activity under illumination, we identify different types of grain boundaries, presumably associated with different crystallite orientations. A comprehensive discussion of the applicability of different models is presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
