Electrical Activation of Interstitial Ni in Cu‐Doped Si

Abstract

Modifications of the deep‐level spectrum of copper‐doped Si due to the interaction with mobile nickel species are studied using the deep‐level transient spectroscopy (DLTS) and Laplace‐DLTS techniques. The neutral interstitial nickel atoms () are introduced at near room temperatures by etching in a Ni‐contaminated KOH aqueous solution. Two levels similar to the donor and acceptor levels of substitutional nickel are observed to form as a result of the copper−nickel interaction. Analysis of the depth profiles leads to a tentative conclusion that the levels belong to atoms, which are influenced by a nearby copper−nickel complex. The disturbed defects are formed via intermediate electrically active Ni−Cu complexes.