Abstract
The electrical activation and carrier concentration profiles in high-dose Si-implanted (120 keV, 1 × 10 14 cm −2) GaAs layers are reported. The highest activation efficiency observed is 44% both for SiO 2 and for SiO x N y , encapsulation during rapid thermal annealing. For SiO x N y , capping the carrier concentration profile is within the theoretical implantation profile, for SiO 2 capping the carrier concentration profiles are diffusion broadened. Defect studies by deep-level transient spectroscopy revealed the midgap level EL2 as a dominant electron trap after implantation and annealing. The EL2 concentration in as-grown homogeneously Si-doped GaAs layers is very low, but increases strongly during annealing. The increase of the EL2 concentration depends on the cap layer, being much stronger for SiO 2 encapsulation than for SiO x N y capping. The implantation-induced trap concentration can be annealed out to about a value as arising from the capping and annealing procedure at that temperature.
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