Abstract

Steering magnetism by electric fields upon interfacing ferromagnetic (FM) and ferroelectric (FE) materials to achieve an emergent multiferroic response bears a great potential for nano-scale devices with novel functionalities. FM/FE heterostructures allow, for instance, the electrical manipulation of magnetic anisotropy via interfacial magnetoelectric (ME) couplings. A charge-mediated ME effect is believed to be generally weak and active in only a few angstroms. Here we present an experimental evidence uncovering a new magnon-driven, strong ME effect acting on the nanometer range. For Co92Zr8 (20 nm) film deposited on ferroelectric PMN-PT we show via ferromagnetic resonance (FMR) that this type of linear ME allows for electrical control of simultaneously the magnetization precession and its damping, both of which are key elements for magnetic switching and spintronics. The experiments unravel further an electric-field-induced negative magnetic permeability effect.

Highlights

  • Damping are directly controllable in Co92Zr8(CoZr)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) heterostructure by means of a gate voltage

  • We find that magnetic excitations pumped by the external electric field by virtue of the magnetoelectric may result in electric field-induced negative imaginary part of magnetic susceptibility at room temperature

  • Free energy F, i.e., they alter only the effective magnetic field by Heff = − δF/δM but they have no direct influence on the damping parameter α of the magnetization evolution M(t)

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Summary

Introduction

Damping are directly controllable in Co92Zr8(CoZr)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) heterostructure by means of a gate voltage. A vibrating sample magnetometer (VSM) measurements demonstrated an electric field control of magnetic hysteresis loops with an in-plane uniaxial magnetic anisotropy (cf Fig. s1 in the Supplementary).

Results
Conclusion
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