Abstract
Shubnikov-de Haas and Van der Pauw Hall effect measurements on strained InAs0.6P0.4/InP one-side-modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been performed in order to investigate the properties of an electron gas in an InAs0.6P0.4 single quantum well. Hall effect measurements showed that the mobility and the carrier concentration were 40800 cm2 V-1 s-1 and 1.43*1012 cm-2 at 1.5 K, respectively. The Shubnikov-de Haas measurements and fast-Fourier analyses clearly showed an oscillation frequency, which changes with the angle between the magnetic field and the surface normal, indicative of the occupation of the InAs0.6P0.4 potential well by two-dimensional electrons. The subband energies and energy wavefunctions were determined using the experimental results and a self-consistent method taking into account the exchange-correlation effects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
