Abstract
We have investigated coplanar superconducting field-effect devices, which consist of a YBa2Cu3OX thin film for the center channel and two side-gate electrodes, and a SrTiO3 substrate as a gate insulator. Because of its simple structure, this device requires only a few steps in the fabrication process. We first simulated the electric-field distribution of the device by numerical calculation. The result indicated that significant current modulation was expected under 10 V gate voltage in this device. Based on the calculation, we fabricated the devices and measured their electric property, which showed 2% IC modulation. Modulation showed a saturation characteristic, which resulted from the electric field dependence of dielectric constant of SrTiO3 at low temperatures. This is the first observation of a superconducting field-effect device with a coplanar structure.
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