Abstract
This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy. The electrical behavior have been investigated using by electric permittivity, modulus formalism and conductance measurements. As has been found from electrical conductance, dispersive behavior is related to barrier inhomogeneity and deep trap in barrier layer. On the other hand, the strain relaxation of charge transport is studied both permittivity and electric modulus formalisms.
Highlights
This work investigated the electrical properties in AlGaN/GaN/Si HEMTsgrown by molecular beam epitaxy
We have investigated the electrical conductance, the dielectric formalism and the complex modulus
We have investigated the electrical properties of (Mo/Au)/AlGaN/GaN/Si HEMTs
Summary
M.A. Zaidi Universite de Monastir Faculte des Sciences Economiques et de Gestion de Mahdia. Research Article Keywords: AlGaN/GaN/Si HEMTs, electrical conductance, complex permittivity, modulus formalisms, strain relaxation.
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