Abstract
AbstractAn accurate reformulation of the electric power in quasi‐ballistic (classical or quantum) scenarios is deduced within an explicit many‐particle treatment of the Coulomb interaction. The traditional definition of the electric power is compared with the new formulation presented here for classical bulk, quantum well and quantum wire double‐gate MOSFETs by means of 3D many‐electron Monte Carlo simulations. The accurate results with the many‐electron approach show not‐negligible discrepancies when compared with the conventional definition. Such small discrepancies become very important when the single‐transistor power is multiplied by the huge number of transistors present in the state‐of‐the‐art integrated circuits. Copyright © 2010 John Wiley & Sons, Ltd.
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