Abstract

Generation of spectrally tunable single photon sources at predetermined spatial locations is a key enabling step toward scalable optical quantum technologies. In this regard, semiconducting two dimensional materials, like tungsten diselenide (WSe2), have recently been shown to host optically active quantum emitters that can be strain induced using nanostructured substrates and also be spectrally tuned with electric and magnetic fields. In this work, we employ a van der Waals heterostructure of WSe2, hexagonal boron nitride, and few layer graphene on a nanopillar array to yield electric field tunable single photon emission at locations with induced strain. The quantum emission lines, which have linewidths of hundreds of μeV, can be tuned by several times their linewidths. In contrast to previous reports of decrease in energy of randomly occurring quantum emitters in WSe2, we interestingly find an increase in energies (blueshift) in these strain-induced emitters.

Highlights

  • A quantum network1 with quantum nodes that communicate using quantum states of light is a long sought after goal in the field of quantum information science (QIS)

  • Atomically thin transition metal dichalcogenides (TMDCs) like WSe2 and WS2 have grasped attention in this context owing to their strong optical response and their ability to host optically active individual emitters caused by randomly occurring strain or lattice defect-induced traps for single excitons

  • We demonstrate electric field control of emission wavelengths of single photon sources created at the nanopillar locations on a monolayer of an atomically thin WSe2 layer by fabricating van der Waals (vdW) heterostructures on a nanostructured substrate

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Summary

Introduction

A quantum network1 with quantum nodes that communicate using quantum states of light is a long sought after goal in the field of quantum information science (QIS). We demonstrate electric field control of emission wavelengths of single photon sources created at the nanopillar locations on a monolayer of an atomically thin WSe2 layer by fabricating vdW heterostructures on a nanostructured substrate.

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