Abstract
We investigated the strain-induced modulation of in-plane magnetic anisotropy in single crystal Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) with a (011) orientation/seed layer/IrMn/CoFeB/MgO/CoFeB/capping layer structure using spin-torque ferromagnetic resonance (ST-FMR) at room temperature. An in-plane biaxial strain is produced by an electric field applied across the substrate, which results in the tuning of the magnetic anisotropy of the CoFeB layer. As the change in the electric field value progresses, the MR loop becomes slanted, indicating the change in the easy axis direction. A strain-induced FMR frequency shift dependence of 145 MHz⋅cm⋅kV−1 is obtained by analyzing the experimental FMR spectra. An analytical model of the potential dynamic mechanism based on the strain induced reorientation of magnetization was discussed. Our results suggest that PMN-PT based magnetic tunnel junctions can have applications in electric-field driven spintronic devices.
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