Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

Abstract

It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at T = 100 K from 4.6 to 8 μm. The monochromatic photosensitivity at hν = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.