Abstract
A NiFe2O4(NFO) thin film was epitaxially grown on Nb doped (001) SrTiO3 (NSTO) single-crystal substrate by pulsed laser deposition to form a Pt/NFO/NSTO/In heterostructure. This heterostructure exhibits stable bipolar resistive switching, well retention and multilevel memory properties. The maximum ratio of high resistance to low resistance is up to 1 × 103. Different high and low resistance states and their corresponding different magnetization can be observed at the same time upon applying different voltages. The close correlation between the resistance state and magnetism shows a possible novel magnetoelectric coupling and modulation. Studies reveals that carrier injection-trapped/detrapped in the defect energy levels of the NFO/NSTO heterostructure interface is the major origin of the resistive switching, while the redox reaction of Ni2+ caused by oxygen vacancies play a vital role in regulating the magnetism. This study demonstrates that this Pt/NFO/NSTO heterostructure shows potential application in the non-volatile multilevel resistive switching memory and novel magnetoelectric coupling and sensing devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
