Abstract
The electric field modulated electronic properties are investigated in InAs/GaSb based type II and broken-gap quantum wells. The transfer matrix method is employed to solve the Schrcidinger equation in the present of the external electric field. The wavefunctions and subband energies for electron and hole can be tuned by the external electric field. The exchange self-energy induced by Coulomb interaction can be modulated by the gate electric voltage by tuning the Fermi energy and the form-factor which depends on the overlap of the wavefunctions. Our results provide a simple way to determine the electronic properties in InAs/GaSb based quantum well system.
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