Abstract
Electric-field induced transition of resistive switching behaviors has been demonstrated in BaTiO3/Co:BaTiO3/BaTiO3 trilayers. At low applied bias, the Au/BaTiO3/Co:BaTiO3/BaTiO3/Pt device shows bipolar resistive switching (BRS) behavior, whereas it converts to complementary resistive switching (CRS) at high applied bias due to the depletion of oxygen vacancies in BaTiO3 layer. The Schottky-like emission accompanied by trapping/detrapping process at the interfaces is likely responsible for the BRS and CRS effects in the trilayers. Furthermore, the operating current of the CRS devices can be reduced significantly by decreasing the doped layer.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
