Electric field induced spin resolved graphene p–n junctions on magnetic Janus VSeTe monolayer

Abstract

Graphene based p–n junctions exhibit intriguing and distinctive electronic properties, making them promising candidates for spintronic and spin photonic devices. While the attendant realization of magnetized graphene p–n junctions is highly desirable. Using first-principles calculations, we show that in the presence of magnetic proximity coupling effect of graphene supported on Te-termination magnetic Janus VSeTe monolayer (VSeTe/G), the graphene is readily spin-polarized and the Dirac bands near Fermi level keep intact. More interestingly, the external electric field (E ex) could significantly influence the bands of the spin down channel near Fermi level, due to the dominant electronic Coulomb screening effect. When the E ex exceeds 0.35 eV Å−1 with opposite direction to intrinsic dipole moment, the VSeTe/G heterostructure would turn into n type doping from the initial light p type doping in the spin down channel. However, those of the spin up channel in the vicinity of Fermi level are inert and still preserve initial p type against external electric field. In terms of such distinctive differences between the Dirac bands in the spin up and spin down channels, we propose a featured spin resolved graphene p–n junctions on magnetic Janus VSeTe by applying appropriate external electric field. Our findings are generally applicable to other similar magnetic Janus systems (i.e. graphene/FeICl) and might provide a feasible strategy to realize stable spin resolved graphene p–n junctions extendedly.